1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com tn0620 features low threshold (1.6v max.) high input impedance low input capacitance (110pf typical) fast switching speeds low on-resistance free from secondary breakdown low input and output leakage complementary n- and p-channel devices applications logic level interfaces - ideal for ttl and cmos solid state relays battery operated systems photo voltaic drives analog switches general purpose line drivers telecom switches ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? general description this low threshold, enhancement-mode (normally-off) transistor utilizes a vertical dmos structure and supertexs well-proven, silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coef?cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. n-channel enhancement-mode vertical dmos fet absolute maximum ratings parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c soldering temperature* 300 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. * distance of 1.6mm from case for 10 seconds. ordering information device package option bv dss /bv dgs (v) r ds(on) (max) () i d(on) (min) (a) v gs(th) (max) (v) to-92 tn0620 TN0620N3-G 200 6.0 1.0 1.6 -g indicates package is rohs compliant (green) pin con?gurations to-92 (n3) ga te source drain yy = year sealed ww = week sealed = green packaging t n 0 6 2 0 y y w w to-92 (n3) product marking
2 tn0620 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com electrical characteristics (t a = 25 o c unless otherwise speci?ed) sym parameter min typ max units conditions bv dss drain-to-source breakdown voltage 200 - - v v gs = 0v, i d = 2.0ma v gs(th) gate threshold voltage 0.6 - 1.6 v v gs = v ds , i d = 1.0ma v gs(th) change in v gs(th) with temperature - - -5.0 mv/ o c v gs = v ds , i d = 1.0ma i gss gate body leakage - - 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - 10 a v gs = 0v, v ds = max rating - - 1.0 ma v ds = 0.8 max rating, v gs = 0v, t a = 125c i d(on) on-state drain current 0.5 - - a v gs = 5.0v, v ds = 25v 1.0 - - v gs = 10v, v ds = 25v r ds(on) static drain-to-source on-state resistance - 6.0 8.0 v gs = 5.0v, i d = 250ma - 4.0 6.0 v gs = 10v, i d = 500ma r ds(on) change in r ds(on) with temperature - - 1.4 %/ o c v gs = 10v, i d = 500ma g fs forward transductance 300 400 - mmho v ds = 25v, i d = 500ma c iss input capacitance - 110 150 pf v gs = 0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - 40 85 c rss reverse transfer capacitance - 10 35 t d(on) turn-on delay time - - 10 ns v dd = 25v, i d = 1.0a, r gen = 25 t r rise time - - 8.0 t d(off) turn-off delay time - - 20 t f fall time - - 20 v sd diode forward voltage drop - - 1.8 v v gs = 0v, i sd = 1.0a t rr reverse recovery time - 300 - ns v gs = 0v, i sd = 1.0a notes: all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) all a.c. parameters sample tested. 1. 2. notes: ? i d (continuous) is limited by max rated t j . thermal characteristics package i d (continuous) ? (ma) i d (pulsed) (a) power dissipation @t c = 25 o c (w) jc ( o c/w) ja ( o c/w) i dr ? (ma) i drm (a) to-92 250 2.0 1.0 125 170 250 2.0 switching waveforms and test circuit 90% 10% 90% 90% 10% 10% puls e genera to r v dd r l outpu t d.u.t . t (on) t d(on) t (off ) t d(off) t f t r inpu t input output 10v v dd r gen 0v 0v
3 tn0620 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves output characteristics 4.0 3.2 2.4 1.6 0.8 0 1 0 2 0 3 0 5 0 40 v ds (volts) i ) s e r e p m a ( d saturation characteristics 4. 0 3. 2 2. 4 1. 6 0. 8 0 0 2 4 6 10 8 3v 10 v 2v 4v 6v 8v v ds (volts) i ) s e r e p m a ( d maximum rated safe operating area 1 1000 100 10 0.1 1.0 10 0.01 v ds (volts) i ) s e r e p m a ( d thermal response characteristics ) d e z i l a m r o n ( e c n a t s i s e r l a m r e h t 1. 0 0. 8 0. 6 0. 4 0. 2 0.001 1 0 0.01 0.1 1 t p (seconds ) transconductance vs. drain current 1.0 0.8 0.6 0.4 0.2 0 0 2.5 0. 5 1 .0 1.5 2.0 g s f ) s n e m e i s ( i d (amperes) power dissipation vs. case temperatur e 2. 0 1. 0 0 0 1 50 10 0 50 125 75 25 t c o c) ( d p ) s t t a w ( 10v 8v 6v 4v 3v 2v to-92 v ds = 25v t a = -55 o c t a = 25 o c t c = 25 o c t a = 150 o c v gs = 0 0 to-92 (dc) v gs = to-9 2 p d = 1w t c = 25 o c
4 tn0620 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves (cont.) gate drive dynamic characteristic s q ( nanocoulombs) g v s g ) s t l o v ( t j ) h t ( s g r o n ( v ) d e z i l a m ) n o ( s d ( r ) d e z i l a m r o n v ds (th) an d r variation with temperature c) ( o on-resistance vs. drain current (amperes ) d ) s m h o ( ) n o ( s d r variation with temperatur e dss s s d ) d e z i l a m r o n ( v b c) o ( t j transfer characteristics v gs (volts) i ) s e r e p m a ( d capacitance vs. drain-to-source voltage 200 150 100 50 0 ) s d a r a f o c i p ( c v ds (volts) i bv 0 1 0 2 0 3 0 4 0 0 2 4 6 8 1 0 4. 0 3. 2 2. 4 1. 6 0. 8 0 -5 0 0 50 100 150 1. 1 1. 0 0. 9 15 12 9 6 3 0 1.4 1.2 1.0 0.8 0.6 2.0 1.6 1.2 0.8 0.4 0 10 8 6 4 2 0 0.5 1.0 1.5 2.0 2.5 -5 0 0 50 100 150 100 pf v ds = 40 v v ds = 10v 178 pf (th) v @ 1ma v gs = 5v v gs = 10v t = -5 5 o c a v ds = 25v c iss c os s c rss 0 0 .8 1. 6 2.4 4.0 3.2 r @ 10v, 0.5a ds f = 1mhz 0 t = 25 o c a t = 150 o c a
supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate product liability indemnification insurance agreement. supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. website: http//www .supertex.com . ?2008 all rights reserved. unauthorized use or reproduction is prohibited . 1235 bordeaux drive, sunnyvale, ca 9408 9 te l: 408-222-8888 www .supertex.com 5 tn0620 (the package drawing(s) in this data sheet may not re?ect the most current speci?cations. for the latest package outline information go to http://www.supertex.com/packaging.htm l .) doc.# dsfp-tn0620 a111708 3-lead to-92 package outline (n3) symbol a b c d e e1 e e1 l dimensions (inches) min .170 .014 ? .014 ? .175 .125 .080 .095 .045 .500 nom - - - - - - - - - max .210 .022 ? .022 ? .205 .165 .105 .105 .055 .610* jedec registration to-92. * this dimension is not speci?ed in the original jedec drawing. the value listed is for reference only. ? this dimension is a non-jedec dimension. drawings not to scale. supertex doc.#: dspd-3to92n3, version d080408. seating plane 1 2 3 front v ie w side vi ew bottom vi ew e1 e d e1 l e c 1 2 3 b a
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